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| Semiconductor BC817F NPN Silicon Transistor Descriptions * High current application * Switching application Features * Suitable for AF-Driver stage and low power output stages * Complementary pair with BC807F Ordering Information Type NO. BC817F Marking NA : hFE rank Package Code SOT-23F Outline Dimensions 2.40.1 1.60.1 unit : mm 1 2.90.1 1.90 BSC 3 0.40.05 2 0.150.05 KST-2087-000 0.90.1 0~0.1 PIN Connections 1. Base 2. Emitter 3. Collector 1 BC817F Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25C) Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 50 35 5 800 200 150 -55~150 Unit V V V mA mW C C Electrical Characteristics Characteristic Collector-Emitter breakdown voltage Base-Emitter turn on voltage Collector-Emitter saturation voltage Collector cut-off current DC current gain Transition frequency Collector output capacitance (Ta=25C) Symbol BVCEO VBE(ON) VCE(sat) ICBO hFE* fT Cob Test Condition IC=1mA, IE=0 VCE=1V, IC=300mA IC=500mA, IB=50mA VCB=25V, IE=0 VCE=1V, IC=100mA VCB=5V, IC=10mA VCB=10V, IE=0, f=1MHz Min. Typ. Max. 35 100 100 16 1.2 700 100 630 - Unit V V mV nA MHz pF * : hFE rank / 16(A) : 100 ~ 250, 25(B) : 160 ~ 400, 40(C) : 250 ~ 630 KST-2087-000 2 BC817F Electrical Characteristic Curves Fig. 1 PC - Ta Fig. 2 IC - VBE 2SC5344SF Fig. 3 IC - VCE Fig. 4 VCE(sat) - IC Fig. 5 hFE - IC KST-2087-000 3 |
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